Transphorm TP65H150BG4JSG-TR

制造商料号:

TP65H150BG4JSG-TR

制造商:

Transphorm

封装:

8-PQFN (5x6)

数据手册:

产品描述:

GANFET N-CH 650V 13A QFN5X6

发送询价单

如有关于价格、数量等具体要求，请提交询价单。

数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	Transphorm
封装	8-PQFN (5x6)
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	4.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 6V
Product Status	Active
Supplier Device Package	8-PQFN (5x6)
Vgs(th) (Max) @ Id	2.8V @ 500µA
Drain to Source Voltage (Vdss)	650 V
Series	SuperGaN®
Power Dissipation (Max)	83W (Tc)
Package / Case	8-PowerTDFN
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)