Transphorm TP65H050G4BS

制造商料号:

TP65H050G4BS

制造商:

Transphorm

封装:

TO-263

数据手册:

产品描述:

650 V 34 A GAN FET

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数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	Transphorm
封装	TO-263
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Product Status	Active
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	4.8V @ 700µA
Drain to Source Voltage (Vdss)	650 V
Series	SuperGaN®
Power Dissipation (Max)	119W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TP65H050