Transphorm TP65H035WS

制造商料号:

TP65H035WS

制造商:

Transphorm

封装:

TO-247-3

数据手册:

产品描述:

GANFET N-CH 650V 46.5A TO247-3

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数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	Transphorm
封装	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
Product Status	Active
Supplier Device Package	TO-247-3
Vgs(th) (Max) @ Id	4.8V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	156W (Tc)
Package / Case	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	46.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tube
Base Product Number	TP65H035