Tagore Technology TP44100SG

制造商料号:

TP44100SG

制造商:

Tagore Technology

封装:

22-QFN (5x7)

数据手册:

产品描述:

GAN FET HEMT 650V .09OHM 22QFN

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数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	Tagore Technology
封装	22-QFN (5x7)
Operating Temperature	-55°C ~ 150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	110 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 6 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 500mA, 6V
Product Status	Active
Supplier Device Package	22-QFN (5x7)
Vgs(th) (Max) @ Id	1.7V @ 11mA (Typ)
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	-
Package / Case	22-PowerVFQFN
Technology	GaNFET (Gallium Nitride)
Mfr	Tagore Technology
Current - Continuous Drain (Id) @ 25°C	13.5A (Tc)
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	0V, 6V
Package	Tape & Reel (TR)
Base Product Number	TP44100