NXP USA Inc. PHB20N06T,118

制造商料号:

PHB20N06T,118

制造商:

NXP USA Inc.

封装:

D2PAK

数据手册:

产品描述:

MOSFET N-CH 55V 20.3A D2PAK

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规格

类型	产品描述
分类	单 FET，MOSFET
制造商	NXP USA Inc.
封装	D2PAK
Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 10A, 10V
Product Status	Active
Supplier Device Package	D2PAK
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	55 V
Series	TrenchMOS™
Power Dissipation (Max)	62W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	20.3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk