图片仅供参考。
制造商料号:
K4B4G1646E-BYK000
制造商:
Samsung Semiconductor, Inc.
封装:
-
数据手册:
-
产品描述:
DDR3-1600 4GB (256MX16)1.25NS CL
如有关于价格、数量等具体要求,请提交询价单。
| 类型 | 产品描述 |
|---|---|
| 分类 | 存储器 |
| 制造商 | Samsung Semiconductor, Inc. |
| DigiKey Programmable | Not Verified |
| Clock Frequency | 800 MHz |
| Operating Temperature | 0°C ~ 95°C |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 |
| Mounting Type | Surface Mount |
| Memory Type | Volatile |
| Product Status | Active |
| Series | - |
| Package / Case | 96-TFBGA |
| Memory Size | 4Gbit |
| Voltage - Supply | 1.35V |
| Mfr | Samsung Semiconductor, Inc. |
| Package | Tray |
| Memory Format | DRAM |