图片仅供参考。
制造商料号:
IV1Q12050T3
制造商:
Inventchip
封装:
TO-247-3
数据手册:
产品描述:
SIC MOSFET, 1200V 50MOHM, TO-247
如有关于价格、数量等具体要求,请提交询价单。
| 类型 | 产品描述 |
|---|---|
| 分类 | 单 FET,MOSFET |
| 制造商 | Inventchip |
| 封装 | TO-247-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 20V |
| Product Status | Active |
| Supplier Device Package | TO-247-3 |
| Vgs(th) (Max) @ Id | 3.2V @ 6mA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Series | - |
| Power Dissipation (Max) | 327W (Tc) |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | Inventchip |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Vgs (Max) | +20V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |