图片仅供参考。
制造商料号:
IRFHE4250DTRPBF
制造商:
International Rectifier
封装:
32-PQFN (6x6)
数据手册:
-
产品描述:
HEXFET POWER MOSFET
如有关于价格、数量等具体要求,请提交询价单。
| 类型 | 产品描述 |
|---|---|
| 分类 | FET、MOSFET 阵列 |
| 制造商 | International Rectifier |
| 封装 | 32-PQFN (6x6) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1735pF @ 13V, 4765pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V, 53nC @ 4.5V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
| Product Status | Active |
| Supplier Device Package | 32-PQFN (6x6) |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA, 2.1V @ 100µA |
| Drain to Source Voltage (Vdss) | 25V |
| Series | HEXFET® |
| Package / Case | 32-PowerVFQFN |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 156W (Tc) |
| Mfr | International Rectifier |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc), 303A (Tc) |
| Package | Bulk |
| Base Product Number | IRFHE4250 |