Vishay IRF640LPBF

制造商料号:

IRF640LPBF

制造商:

Vishay

封装:

TO-262-3

数据手册:

产品描述:

MOSFET N-CH 200V 18A TO262-3

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数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	Vishay
封装	TO-262-3
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Product Status	Obsolete
Supplier Device Package	TO-262-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	3.1W (Ta), 130W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRF640