Infineon Technologies IPG20N06S2L65AAUMA1

制造商料号:

IPG20N06S2L65AAUMA1

制造商:

Infineon Technologies

封装:

PG-TDSON-8-10

数据手册:

产品描述:

MOSFET

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数量

规格

类型	产品描述
分类	FET、MOSFET 阵列
制造商	Infineon Technologies
封装	PG-TDSON-8-10
Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	65mOhm @ 15A, 10V
Product Status	Obsolete
Supplier Device Package	PG-TDSON-8-10
Vgs(th) (Max) @ Id	2V @ 14µA
Drain to Source Voltage (Vdss)	55V
Series	OptiMOS®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	43W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Package	Bulk
Base Product Number	IPG20N