Goford Semiconductor GT013N04TI

制造商料号:

GT013N04TI

制造商:

Goford Semiconductor

封装:

TO-220

数据手册:

产品描述:

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

发送询价单

如有关于价格、数量等具体要求，请提交询价单。

数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	Goford Semiconductor
封装	TO-220
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3986 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5mOhm @ 30A, 10V
Product Status	Active
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	-
Power Dissipation (Max)	90W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	220A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube