GE Aerospace GE12050EEA3

制造商料号:

GE12050EEA3

制造商:

GE Aerospace

封装:

Module

数据手册:

产品描述:

1200V 475A 6-Pack SiC Module

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数量

规格

类型	产品描述
分类	FET、MOSFET 阵列
制造商	GE Aerospace
封装	Module
Operating Temperature	-55°C ~ 150°C (Tc)
FET Feature	Silicon Carbide (SiC)
Configuration	6 N-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds	29300pF @ 600V
Gate Charge (Qg) (Max) @ Vgs	1248nC @ 18V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	4.4mOhm @ 475A, 20V
Product Status	Active
Supplier Device Package	Module
Vgs(th) (Max) @ Id	4.5V @ 160mA
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	SiC Power
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1250W (Tc)
Mfr	GE Aerospace
Current - Continuous Drain (Id) @ 25°C	475A (Tc)
Package	Bulk
Base Product Number	GE12050