SemiQ GCMX080B120S1-E1

制造商料号:

GCMX080B120S1-E1

制造商:

SemiQ

封装:

SOT-227

数据手册:

产品描述:

SIC 1200V 80M MOSFET SOT-227

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数量

规格

类型	产品描述
分类	单 FET，MOSFET
制造商	SemiQ
封装	SOT-227
Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1336 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Supplier Device Package	SOT-227
Vgs(th) (Max) @ Id	4V @ 10mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	142W (Tc)
Package / Case	SOT-227-4, miniBLOC
Technology	SiCFET (Silicon Carbide)
Mfr	SemiQ
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	GCMX080