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G4S06515DT
图片仅供参考。
Global Power Technology-GPT G4S06515DT
制造商料号:
G4S06515DT
制造商:
Global Power Technology-GPT
封装:
TO-263
数据手册:
产品描述:
DIODE SIL CARBIDE 650V 38A TO263
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规格
| 类型 | 产品描述 |
|---|---|
| 分类 | 单二极管 |
| 制造商 | Global Power Technology-GPT |
| 封装 | TO-263 |
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 645pF @ 0V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-263 |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Cut Tape (CT) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 38A |
订阅
Certifications:
ISO 9001:2015
ISO 14001:2015