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| 类型 | 产品描述 |
|---|---|
| 分类 | 单 FET,MOSFET |
| 制造商 | EPC |
| 封装 | Die |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 30A, 5V |
| Product Status | Active |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 15mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Series | eGaN® |
| Package / Case | Die |
| Technology | GaNFET (Gallium Nitride) |
| Mfr | EPC |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
| Package | Tape & Reel (TR) |
| Base Product Number | EPC20 |