SIDC09D60E6YX1SA1

Infineon Technologies

Manufacturer Part #:

SIDC09D60E6YX1SA1

Manufacturer:

Infineon Technologies

Package:

Sawn on foil

Datasheet:

Description:

DIODE GP 600V 20A WAFER

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Specifications

Product Details

Mfr	Infineon Technologies
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Bulk
Technology	Standard
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Obsolete
Base Product Number	SIDC09D60
Capacitance @ Vr, F	-
Supplier Device Package	Sawn on foil
Reverse Recovery Time (trr)	150 ns
Current - Reverse Leakage @ Vr	27 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	20A
Operating Temperature - Junction	-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 20 A

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