SI5511DC-T1-GE3

Vishay

Manufacturer Part #:

SI5511DC-T1-GE3

Manufacturer:

Vishay

Package:

1206-8 ChipFET™

Datasheet:

Description:

MOSFET N/P-CH 30V 4A 1206-8

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Specifications

Product Details

Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
FET Feature	Logic Level Gate
Power - Max	3.1W, 2.6W
Configuration	N and P-Channel
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Base Product Number	SI5511
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	55mOhm @ 4.8A, 4.5V
Supplier Device Package	1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V
Drain to Source Voltage (Vdss)	30V
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4A, 3.6A

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