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RN1910FE,LF(CT
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Toshiba Semiconductor and Storage RN1910FE,LF(CT
Manufacturer Part #:
RN1910FE,LF(CT
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
ES6
Datasheet:
-
Description:
TRANS 2NPN PREBIAS 0.1W ES6
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Specifications
| Type | Description |
|---|---|
| Category | Bipolar Transistor Arrays, Pre-Biased |
| Manufacturer | Toshiba Semiconductor and Storage |
| Package/Case | ES6 |
| Frequency - Transition | 250MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 4.7kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Mounting Type | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Product Status | Active |
| Supplier Device Package | ES6 |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Package / Case | SOT-563, SOT-666 |
| Power - Max | 100mW |
| Resistor - Emitter Base (R2) | - |
| Mfr | Toshiba Semiconductor and Storage |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Base Product Number | RN1910 |
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