NXP Semiconductors PDTC114EMB,315

Manufacturer Part #:

PDTC114EMB,315

Manufacturer:

NXP Semiconductors

Package/Case:

DFN1006B-3

Datasheet:

Description:

PDTC114EMB - UPN RESISTOR-EQUIPP

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Specifications

Type	Description
Category	Single, Pre-Biased Bipolar Transistors
Manufacturer	NXP Semiconductors
Package/Case	DFN1006B-3
Frequency - Transition	230 MHz
Current - Collector (Ic) (Max)	100 mA
Resistor - Base (R1)	10 kOhms
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Mounting Type	Surface Mount
Voltage - Collector Emitter Breakdown (Max)	50 V
Product Status	Active
Supplier Device Package	DFN1006B-3
Series	-
Transistor Type	NPN - Pre-Biased
Package / Case	SC-101, SOT-883
Power - Max	250 mW
Resistor - Emitter Base (R2)	10 kOhms
Mfr	NXP Semiconductors
Current - Collector Cutoff (Max)	1µA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Base Product Number	PDTC114