IRD3CH31DB6

Infineon Technologies

Manufacturer Part #:

IRD3CH31DB6

Manufacturer:

Infineon Technologies

Package:

Wafer

Datasheet:

Description:

DIODE GEN PURP 1.2KV 50A WAFER

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Specifications

Product Details

Mfr	Infineon Technologies
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Bulk
Technology	Standard
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Obsolete
Base Product Number	IRD3CH31
Capacitance @ Vr, F	-
Supplier Device Package	Wafer
Reverse Recovery Time (trr)	240 ns
Current - Reverse Leakage @ Vr	20 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	50A
Operating Temperature - Junction	-40°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	2.7 V @ 50 A

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