GT10J312(Q)

Toshiba Semiconductor and Storage

Manufacturer Part #:

GT10J312(Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SM

Datasheet:

Description:

IGBT 600V 10A 60W TO220SM

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Specifications

Product Details

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Power - Max	60 W
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Obsolete
Test Condition	300V, 10A, 100Ohm, 15V
Switching Energy	-
Base Product Number	GT10J312
Td (on/off) @ 25°C	400ns/400ns
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-220SM
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Reverse Recovery Time (trr)	200 ns
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	20 A
Voltage - Collector Emitter Breakdown (Max)	600 V

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