GA10JT12-247

GeneSiC Semiconductor

Manufacturer Part #:

GA10JT12-247

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247AB

Datasheet:

Description:

TRANS SJT 1200V 10A TO247AB

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Specifications

Product Details

Mfr	GeneSiC Semiconductor
Series	-
Package	Tube
FET Type	-
Vgs (Max)	-
Technology	SiC (Silicon Carbide Junction Transistor)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Operating Temperature	175°C (TJ)
Rds On (Max) @ Id, Vgs	140mOhm @ 10A
Power Dissipation (Max)	170W (Tc)
Supplier Device Package	TO-247AB
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	-
Current - Continuous Drain (Id) @ 25°C	10A (Tc)

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